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STAC2932F Arkusz danych(PDF) 1 Page - STMicroelectronics |
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STAC2932F Arkusz danych(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() January 2012 Doc ID 17120 Rev 3 1/14 14 STAC2932F RF power transistor HF/VHF/UHF RF power N-channel MOSFETs Features ■ Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive ■ ST air cavity packaging technology - STAC™ package Description The STAC2932F is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2932F benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC™. Figure 1. Pin connection STAC244F Air cavity 1. Drain 2. Gate 3. Source (Bottom side) 1 1 2 2 3 Table 1. Device summary Order code Marking Base qty. Package Packaging STAC2932FW STAC2932F(1) 20 STAC244F Tray 1. For more details please refer to Chapter 7: Marking, packing and shipping specifications. www.st.com |
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