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STB100NF04T4 Arkusz danych(PDF) 5 Page - STMicroelectronics

Numer części STB100NF04T4
Szczegółowy opis  AEC-Q101 qualified
PDF  20 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB100NF04T4 Arkusz danych(HTML) 5 Page - STMicroelectronics

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STB100NF04T4, STP100NF04
Electrical characteristics
DocID9969 Rev 7
5/20
Table 6: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
120
A
ISDM(1)
Source-drain current (pulsed)
-
480
A
VSD(2)
Forward on voltage
ISD = 120 A, VGS = 0 V
-
1.3
V
tr
Reverse recovery time
ISD = 120 A, VDD = 20 V,
di/dt = 100 A/
μs V, Tj =
150 °C
(see Figure 22: "Test
circuit for inductive load
switching and diode
recovery times")
-
75
-
ns
td(off)
Reverse recovery charge
-
185
-
nC
tf
Reverse recovery current
-
5
-
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulsed: Pulse duration = 300 μs, duty cycle 1.5%



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