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STD8NF25 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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STD8NF25 Arkusz danych(HTML) 1 Page - STMicroelectronics |
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1 / 14 page  This is information on a product in full production. April 2012 Doc ID 018593 Rev 1 1/14 14 STD8NF25 N-channel 250 V, 318 m Ω, 8 A STripFET™ II Power MOSFET in DPAK package Datasheet — production data ■ 100% avalanche tested ■ 175 °C junction temperature Applications ■ Switching applications – Automotive Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Figure 1. Internal schematic diagram Features Order code VDSS RDS(on) max. ID STD8NF25 250 V < 420 m Ω 8 A DPAK 1 3 TAB Table 1. Device summary Order code Marking Package Packaging STD8NF25 8NF25 DPAK Tape and reel www.st.com |
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