STGIPS15C60 datasheet(7/20 Pages) STMICROELECTRONICS

7 / 20 page

DocID025060 Rev 3

7/20

STGIPS15C60

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Note:

tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are

the switching time of IGBT itself under the internally given gate driving condition.

Table 7. Inverter part

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

VCE(sat)

Collector-emitter

saturation voltage

VCC = Vboot = 15 V, VIN

(1)= 0 - 5 V,

IC = 15 A

-1.6

VCC = Vboot = 15 V, VIN

(1)= 0 - 5 V,

IC = 15 A, TJ = 125 °C

-1.7

ICES

Collector-cut off current

(VIN

(1)= 0 “logic state”)

VCE = 550 V, VCC = VBoot = 15 V

100

µA

Diode forward voltage

VIN

(1) = 0 “logic state”, I

C = 15 A

2.3

Inductive load switching time and energy

ton

Turn-on time

VPN = 300 V,

VCC = Vboot = 15 V,

VIN

(1) = 0 - 5 V,

IC = 15 A

(see Figure 3)

-330

tc(on)

Crossover time (on)

150

toff

Turn-off time

925

tc(off)

Crossover time (off)

135

trr

Reverse recovery time

190

Eon

Turn-on switching losses

385

µJ

Eoff

Turn-off switching losses

294

Applied between HINi, LINi and GND for i = U, V, W. (LIN inputs are active-low).

STGIPS15C60 Arkusz danych(PDF) 7 Page - STMicroelectronics

STGIPS15C60 Arkusz danych(HTML) 7 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Arkusz danych Pobierz

Link URL