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STGP20V60F Arkusz danych(PDF) 7 Page - STMicroelectronics

Numer części STGP20V60F
Szczegółowy opis  600 V, 20 A very high speed trench gate field-stop IGBT
PDF  18 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP20V60F Arkusz danych(HTML) 7 Page - STMicroelectronics

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STGB20V60F, STGP20V60F
Electrical characteristics
Figure 8. Safe operating area
Figure 9. Transfer characteristics
Figure 10. Normalized VGE(th) vs. junction
temperature
Figure 11. Normalized V(BR)CES vs. junction
temperature
Figure 12. Capacitance variations
Figure 13. Gate charge vs. gate-emitter voltage
AM17179v1
0.01
0.1
1
10
110
100
IC (A)
VCE (V)
10 μs
100 μs
1 ms
(single pulse T
C =25 °C,
T
J <=175 °C; VGE =15 V)
AM17173v1
TJ=175°C
10
20
30
40
50
60
70
78
9
10
11
IC (A)
VGE (V)
-40°C
25°C
AM17181v1
0.6
0.7
0.8
0.9
1.0
1.1
-50
0
50
100
150
VGE(th)
norm
TJ(ºC)
V = 5V
GE
AM17180v1
0.9
1.0
1.1
-50
0
50
100
150
V(BR)CES
norm
TJ(ºC)
AM17183v1
10
100
1000
0.1
1
10
C (pF)
VCE(V)
C res
Coes
C ies
AM17182v1
0
2
4
6
8
10
12
14
16
025
50
75
100
125
VGE(V)
Qg (nC)
VCC = 480 V
IC = 20 A



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