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STGFW30V60DF Arkusz danych(PDF) 7 Page - STMicroelectronics

Numer części STGFW30V60DF
Szczegółowy opis  Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
PDF  15 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGFW30V60DF Arkusz danych(HTML) 7 Page - STMicroelectronics

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STGFW30V60DF
Electrical characteristics
Figure 8. Transfer characteristics
Figure 9. Diode VF vs. forward current
Figure 10. Normalized VGE(th) vs junction
temperature
Figure 11. Normalized V(BR)CES vs. junction
temperature
Figure 12. Capacitance variations
Figure 13. Gate charge vs. gate-emitter voltage
IC
80
60
20
0
7
(A)
8
VGE(V)
40
Tj=175°C
Tj=25°C
Tj=-40°C
9
100
10
11
VCE = 10 V
AM17417v1
VF
1.9
1.1
10
(A)
20
IF(A)
1.5
Tj=175°C
Tj=25°C
Tj=-40°C
30
2.3
40
50
60
AM17418v1
VGE(th)
0.8
0.6
-50
(norm)
TC(°C)
0.7
0
0.9
1.0
50
100
150
VCE=VGE
IC=1mA
AM17419v1
V(BR)CES
1.1
0.9
-50
(norm)
TC(°C)
1.0
0
50
100
150
IC=2mA
AM17420v1
C(pF)
10
0.1
VCE(V)
1000
1
10
100
10000
Cies
Coes
Cres
AM17421v1
VGE(V)
0
0
Qg(nC)
50
100
2
150 175
4
6
8
10
12
14
16
25
125
75
VCC = 480 V
IC = 30 A
AM17422v1



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