| Zakładka z wyszukiwarką danych komponentów |
|
STGWA40S120DF3 Arkusz danych(PDF) 1 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STGWA40S120DF3 Arkusz danych(HTML) 1 Page - STMicroelectronics |
|
1 / 18 page ![]() This is information on a product in full production. December 2014 DocID026373 Rev 2 1/18 STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Datasheet - production data Figure 1. Internal schematic diagram Features • 10 µs of short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 40 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery antiparallel diode Applications • Industrial drives • UPS • Solar • Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packing STGW40S120DF3 G40S120DF3 TO-247 Tube STGWA40S120DF3 G40S120DF3 TO-247 long leads Tube www.st.com |
Podobny numer części - STGWA40S120DF3 |
|
Podobny opis - STGWA40S120DF3 |
|
|
|
Link URL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Link do karty katalogowej | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |