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STV6618 Arkusz danych(PDF) 10 Page - STMicroelectronics |
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STV6618 Arkusz danych(HTML) 10 Page - STMicroelectronics |
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10 / 24 page ![]() ELECTRICAL CHARACTERISTICS STV6618 10/24 2.6 Chroma Section Characteristics TAMB = 25 °C, VCCV = 5 V, VDD = 5 V, ROUT_VREC = 4.7 kΩ, ROUT_VBUF = 150 Ω, unless otherwise specified. Output impedances of sources: RGV = 75 Ω. 2.7 Digital Outputs TAMB = 25 °C, VCCV = 5 V, VDD = 5 V. Symbol Parameter Test Conditions Min. Typ. Max. Unit VDCIN DC Input Level 2.9 3.0 3.1 V RIN Input Resistance 30 50 k Ω CIN Input Capacitance 2 pF VIN Max Input Signal 1.0 VPP DYN Dynamic Output Signal 2.0 VPP DCOUT DC Output Voltage AUX C Output No Chroma input signal1 1. Measured at IC output pin. 1.4 1.5 1.6 V CBW Chroma Bandwidth VIN = 1 VPP at -3 dB 10 15 MHz CTi Crosstalk Isolation between Input Channel VIN = 1 VPP at 4.43 MHz, on one input 542 2. Minimum Crosstalk values estimated during Qualification phase, based on ST Evaluation Board measurement, TQFP44 package soldered on board. 60 dB CTo Crosstalk Isolation between Output Channel VIN = 1 VPP at 4.43 MHz, on one input, RLOAD = 150 Ω 50 2 55 dB ROUT Output Resistance 5 10 Ω G6C Gain at Chroma Outputs VIN = 1 Vpp and Gain = 6 dB at 1MHz 5.5 6.0 6.5 dB Mute Mute Suppression VIN = 1 VPP at 4.43 MHz, on one input -55 dB CToYdel Chroma to Luma Delay, Source Y/C VIN = VPP at 4.43 MHz 20 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit C_gate_H Pull-up resistor value to VccB3 16 20 24 k Ω C_gate_L Output Low level IIN = 0 mA IIN = 1 mA 0.3 0.7 V C_gate_H Output High level RLOAD = 20 kΩ VDD V DIGOUT1-2-3 Load External pull-up resistor value to VDD 10 k Ω DIGOUT1-2-3 Low Output low level, DIGOUT1-2-3 RLOAD = 10 kΩ 0.7 V DIGOUT1-2-3 Middle Output middle level, DIGOUT1-2-3 RLOAD = 10 kΩ 2.2 V DIGOUT1-2-3 High Output high level,DIGOUT1-2-3 RLOAD = 10 kΩ, Opened collector output VDD V DIGOUT4-5-6 Low Output low level, DIGOUT4-5-6 ILOAD = 2 mA 0.7 V DIGOUT4-5-6 High Output high level, DIGOUT4-5-6 Opened Collector Output 13 V |
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