STPS40L45C datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

DocID6857 Rev 5

3/11

STPS40L45C

Characteristics

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Average forward current versus

ambient temperature (

 = 0.5, per diode)

1012 1416 18202224

IF(av) (A)

PF(av)(W)

δ=tp/T

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

100

125

150

Tamb(°C)

IF(av)(A)

Rth(j-a)=15°C/W

Rth(j-a)=Rth(j-c)

δ=tp/T

Figure 3. Normalized avalanche power derating

versus pulse duration

Figure 4. Normalized avalanche power derating

versus junction temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(tp)

(1 µs)

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(Tj)

(25 °C)

ARM

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum

values, per diode)

Figure 6. Relative variation of thermal

impedance junction to case versus pulse

duration

1E-3

1E-2

1E-1

1E+0

100

125

150

175

200

225

250

t(s)

IM(A)

Tc=25°C

Tc=125°C

Tc=75°C

δ=0.5

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

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