STPSC8H065C datasheet(1/8 Pages) STMICROELECTRONICS

Numer części	STPSC8H065C

Szczegółowy opis	High forward surge capability

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Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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This is information on a product in full production.

November 2013

DocID024808 Rev 2

1/8

STPSC8H065C

650 V power Schottky silicon carbide diode

Datasheet

- production data

Features

 No or negligible reverse recovery

 Switching behavior independent of

temperature

 High forward surge capability

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimized

capacitive charge at turn-off behavior is

independent of temperature.

Especially suited for use in interleaved or bridge-

less topologies, this dual-diode rectifier will boost

the performance in hard switching conditions. Its

high forward surge capability ensures a good

robustness during transient phases.

A1

K

A2

A1

A2

K

TO-220AB

STPSC8H065CT

Table 1. Device summary

Symbol

Value

IF(AV)

2 x 4 A

VRRM

650 V

Tj (max)

175 °C

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