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STS10P4LLF6 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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STS10P4LLF6 Arkusz danych(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() December 2014 DocID025774 Rev 3 1/14 This is information on a product in full production. www.st.com STS10P4LLF6 P- channel 40 V, 0.0125 Ω typ., 10 A, StripFET™ F6 Power MOSFET in SO-8 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STS10P4LLF6 40 V 0.015 10 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packaging STS10P4LLF6 10K4L SO-8 Tape and reel For the P-channel MOSFET actual polarity of voltages and current have to be reversed |
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