STT6N3LLH6 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STT6N3LLH6

4/12

DocID023012 Rev 3

Electrical characteristics

CASE

= 25 °C unless otherwise specified).

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(BR)DSS

Drain-source breakdown

Voltage

= 250 μA, V

= 0

DSS

Zero gate voltage drain

current (V

= 0)

= 30 V

= 30 V, Tc = 125 °C

μA

GSS

Gate body leakage current

= 0)

= ± 20 V

100

GS(th)

Gate threshold voltage

= V

, I

= 250 μA1

DS(on)

Static drain-source on-

resistance

= 10 V, I

= 3 A

0.021

0.025

= 4.5 V, I

= 3 A

0.032

0.036

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

iss

Input capacitance

= 24 V, f=1 MHz,

= 0

283

oss

Output capacitance

rss

Reverse transfer

capacitance

-31

Total gate charge

= 10 V, I

= 6 A

= 4.5 V

Figure 14

-3.6

Gate-source charge

1.5

Gate-drain charge

1.1

Table 6. Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

d(on)

Turn-on delay time

= 10 V, I

= 3 A,

= 4.7

Ω, V

= 4.5 V

Figure 13

-4.8

Rise time

11.2

d(off)

Turn-off delay time

9.4

Fall time

5.4

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