T1610H datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

T1610H

2/9

DocID024630 Rev 1

Characteristics

Table 2. Absolute maximum rating (Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

IT(RMS) On-state rms current (180° conduction angle)

Tc = 133 °C

ITSM

Non repetitive surge peak on-state current, Tj initial = 25 °C

tp = 16.7 ms

168

tp = 20ms

160

I²tI²t Value for fusing

tp = 10 ms

169

A²s

dI/dt

Critical rate of rise of on-state current, IG = 2 x IGT, tr  100 ns

F = 60 Hz

100

A/µs

VDRM,

VRRM

Repetitive peak off-state voltage

Tj = 150 °C

600

VDSM,

VRSM

Non repetitive peak off-state voltage

tp = 10 ms

700

IGM

Peak gate current

tp = 20 µs

PGM

Peak gate power dissipation

tp = 20 µs

PG(AV)

Average gate power dissipation

Tstg

Storage junction temperature range

Operating junction temperature range

-40 to +150

°C

Lead temperature for soldering during 10 s

260

°C

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Value

Unit

IGT

VD = 12 V, RL = 33 

I - II - III

MIN.

0.5

MAX.

VGT

VD = 12 V, RL = 33 

I - II - III

MAX.

1.3

VGD

VD = VDRM, RL = 3.3 k Tj = 150 °C

I - II - III

MIN.

0.2

IT = 500 mA, gate open



MAX.

IG = 1.2 IGT

I - II - III

MAX.

dV/dt

VD = 67% x VDRM, VRRM, gate open

Tj = 150 °C



MIN.

100

V/µs

(dl/dt)c

(dV/dt)c = 0.1 V/µs

Tj = 150 °C



MIN.

8.5

A/ms

(dV/dt)c = 10 V/µs



tgt

ITM = 13 A, VD = 400 V, IG = 100 mA,

dIG/dt = 100 mA/µs, RL = 30 



TYP.

µs

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