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IF4500 Arkusz danych(PDF) 1 Page - InterFET Corporation

Numer części IF4500
Szczegółowy opis  N-Channel Silicon Junction Field-Effect Transistor
PDF  1 Pages
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Producent  INTERFET [InterFET Corporation]
Strona internetowa  http://www.interfet.com
Logo INTERFET - InterFET Corporation

IF4500 Arkusz danych(HTML) 1 Page - InterFET Corporation

  IF4500 Datasheet HTML 1Page - InterFET Corporation  
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B-36
01/99
IF4500
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
– 20 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
225 mW
Power Derating
1.8 mW/°C
Storage Temperature Range
– 65°C to 200°C
TOÐ236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
At 25°C free air temperature:
IF4500
Process NJ450L
Static Electrical Characteristics
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 20
V
IG = – 1 µA, VDS = ØV
Gate Reverse Current
IGSS
– 0.1
nA
VGS = – 30V, VDS = ØV
Gate Source Cutoff Voltage
VGS(OFF)
– 0.35
– 1.5
V
VDS = 15V, ID = 0.5 nA
Drain Saturation Current (Pulsed)
IDSS
5mA
VDS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Common Source
gfs
15
mS
VDS = 15V, ID = 5 mA
f = 1 kHz
Forward Transconductance
Common Source Input Capacitance
Ciss
35
pF
VDS = 15V, VGS = ØV
f = 1 MHz
Common Source
Crss
8pF
VDS = 15V, VGS = ØV
f = 1 MHz
Reverse Transfer Capacitance
Typ
Equivalent Short Circuit
¯eN
1.5
nV/
√Hz V
DS = 12 V, VGS = Ø V
f = 1 kHz
Input Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp
1/14/99 1:51 PM
Page B-36


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