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MDF1933TH Arkusz danych(PDF) 4 Page - MagnaChip Semiconductor. |
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MDF1933TH Arkusz danych(HTML) 4 Page - MagnaChip Semiconductor. |
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4 / 6 page ![]() Nov. 2014. Rev 1.0 4 MagnaChip Semiconductor Ltd. Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature Fig.11 Transient Thermal Response Curve 25 50 75 100 125 150 0 10 20 30 40 50 T C, Case Temperature [،ة] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 ،ط Notes : Duty Factor, D=t 1/t2 PEAK T J = PDM * Z¥èJC * R¥èJC(t) + TC single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 t 1, Rectangular Pulse Duration [sec] 0 5 10 15 20 25 30 35 40 0 1000 2000 3000 4000 5000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 10 20 30 40 50 60 0 2 4 6 8 10 V DS = 40V ※ Note : I D = 50A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 1 s 1 ms 100 ms 10 ms DC 100 us Operation in This Area is Limited by R DS(on) Single Pulse T J=Max rated T C=25،ة V DS, Drain-Source Voltage [V] |
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