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ICS84427CMLF Arkusz danych(PDF) 3 Page - Integrated Device Technology

Numer części ICS84427CMLF
Szczegółowy opis  Crystal-to-LVDS Integrated Frequency Synthesizer/Fanout Buffer
PDF  16 Pages
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Producent  IDT [Integrated Device Technology]
Strona internetowa  http://www.idt.com
Logo IDT - Integrated Device Technology

ICS84427CMLF Arkusz danych(HTML) 3 Page - Integrated Device Technology

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REVISION B 5/6/15
84427 DATA SHEET
3
CRYSTAL-TO-LVDS
INTEGRATED FREQUENCY SYNTHESIZER/FANOUT BUFFER
TABLE 3A. POWER SUPPLY DC CHARACTERISTICS, V
DD = VDDA = 3.3V±5%, T
A
= 0°C TO 70°C
TABLE 3B. LVCMOS / LVTTL DC CHARACTERISTICS, V
DD = VDDA = 3.3V±5%, T
A
= 0°C TO 70°C
Symbol
Parameter
Test Conditions
Minimum
Typical
Maximum
Units
V
DD
Core Supply Voltage
3.135
3.3
3.465
V
V
DDA
Analog Supply Voltage
V
DD – 0.72
3.3
V
DD
V
I
DD
Power Supply Current
300
mA
I
DDA
Analog Supply Current
30
mA
TABLE 3C. LVDS DC CHARACTERISTICS, V
DD = VDDA = 3.3V±5%, T
A
= 0°C TO 70°C
Symbol
Parameter
Test Conditions
Minimum
Typical
Maximum
Units
V
OD
Differential Output Voltage
375
475
575
mV
Δ V
OD
V
OD Magnitude Change
50
mV
V
OS
Offset Voltage
1.3
1.45
1.6
V
Δ V
OS
V
OS Magnitude Change
50
mV
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD
4.6V
Inputs, V
I
-0.5V to V
DD + 0.5V
Outputs, I
O
Continuous Current
10mA
Surge Current
15mA
Package Thermal Impedance,
θ
JA
50°C/W (0 lfpm)
Storage Temperature, T
STG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device.These ratings are stress specifications only. Functional
operation of product at these conditions or any conditions
beyond those listed in the DC Characteristics or AC Charac-
teristics is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect product reliability.
Symbol
Parameter
Test Conditions
Minimum
Typical
Maximum
Units
V
IH
Input High Voltage
2
V
DD + 0.3
V
V
IL
Input Low Voltage
-0.3
0.8
V
I
IH
Input High Current
MR, F_SEL1
V
DD = VIN = 3.465V
150
µA
PLL_SEL,
F_SEL0, F_SEL2
V
DD = VIN = 3.465V
5
µA
I
IL
Input Low Current
MR, F_SEL1
V
DD = 3.465V, VIN = 0V
-5
µA
PLL_SEL,
F_SEL0, F_SEL2
V
DD = 3.465V, VIN = 0V
-150
µA



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