AS6C1608 datasheet(4/13 Pages) ALSC

4 / 13 page

AS6C1608

Rev. 1.1

2048K X 8 BIT LOW POWER CMOS SRAM

Alliance Memory Inc.reserves the rights to change the specifications and products without notice.

Alliance Memory, Inc.

551 Taylor Way, Suite #1, San Carlos, CA 94070, USA

Tel: +1 650 610 6800 Fax: +1 650 620 9211

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATING

UNIT

Voltage on VCC relative to VSS

VT1

-0.5 to 4.6

Voltage on any other pin relative to VSS

VT2

-0.5 to VCC+0.5

Operating Temperature

-40 to 85(I grade)

℃

Storage Temperature

TSTG

-65 to 150

℃

Power Dissipation

DC Output Current

IOUT

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.

TRUTH TABLE

MODE

CE#

CE2

OE#

WE#

I/O OPERATION

SUPPLY CURRENT

Standby

High-Z

ISB,ISB1

High-Z

ISB,ISB1

Output Disable

High-Z

ICC,ICC1

Read

DOUT

ICC,ICC1

Write

DIN

ICC,ICC1

Note: H = VIH, L = VIL, X = Don't care.

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