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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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AS6C2016 Arkusz danych(PDF) 1 Page - Alliance Semiconductor Corporation |
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AS6C2016 Arkusz danych(HTML) 1 Page - Alliance Semiconductor Corporation |
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1 / 13 page  FEATURES Fast access time : 55ns Low power consumption: Operating current : 20/18mA (TYP.) Standby current : 2µA (TYP.) Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 2.0V (MIN.) Lead free and green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The AS6C2016 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C2016 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C2016 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby(ISB1,TYP.) Operating(Icc,TYP.) AS6C2016 (I) -40 ~ 85℃ 2.7 ~ 5.5V 55ns 2µA 20/18mA 512K X 8 BIT LOW POWER CMOS SRAM January 2007 128K X 16 BIT LOW POWER CMOS SRAM FEBRUARY 2008 AS6C2016 FEBRUARY/2008, V 1.c Alliance Memory Inc. Page 1 of 13 |
Podobny numer części - AS6C2016 |
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Podobny opis - AS6C2016 |
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