M68AW128ML55ND6E datasheet(11/22 Pages) STMICROELECTRONICS

Numer części	M68AW128ML55ND6E

Szczegółowy opis	2 Mbit (128K x16) 3.0V Asynchronous SRAM

PDF	22 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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M68AW128M

Table 5. Capacitance

Note: 1. Sampled only, not 100% tested.

2. At TA = 25°C, f = 1 MHz, VCC = 3.0V.

Table 6. DC Characteristics

Note: 1. Average AC current, cycling at tAVAV minimum.

2. E = VIL, LB OR/AND UB = VIL, VIN = VIL OR VIH.

3. E

≤0.2V, LB OR/AND UB ≤0.2V, VIN ≤0.2V OR VIN ≥ VCC –0.2V.

4. Output disabled.

Symbol

Parameter(1,2)

Test

Condition

Min

Max

Unit

CIN

Input Capacitance on all pins (except DQ)

VIN = 0V

8pF

COUT

Output Capacitance

VOUT = 0V

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

ICC1

(1,2)

Operating Supply Current

VCC = 3.6V, f = 1/tAVAV,

IOUT = 0mA

70ns

55ns

ICC2

(3)

Operating Supply Current

VCC = 3.6V, f = 1MHz,

IOUT = 0mA

2mA

ISB

Standby Supply Current CMOS

VCC = 3.6V, f = 0,

≥ VCC –0.2V or

LB=UB

≥ VCC –0.2V

510

µA

ILI

Input Leakage Current

≤VIN ≤VCC

–1

µA

ILO

(4)

Output Leakage Current

≤VOUT ≤VCC

–1

µA

VIH

Input High Voltage

2.2

VCC + 0.3

VIL

Input Low Voltage

–0.3

0.6

VOH

Output High Voltage

IOH = –1.0mA

2.4

VOL

Output Low Voltage

IOL = 2.1mA

0.4

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