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SMM4F12AVCL Arkusz danych(PDF) 2 Page - STMicroelectronics |
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SMM4F12AVCL Arkusz danych(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Characteristics SMM4F12AVCL 2/7 Doc ID 022220 Rev 1 1 Characteristics Figure 1. Electrical characteristics - parameter definitions Figure 2. Definition of IPP pulse Table 1. Absolute ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP Peak pulse voltage (IEC 61000-4-2 contact discharge) 30 kV PPP Peak pulse power dissipation (1) 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Tj initial = Tamb 400 W P Power dissipation on infinite heatsink Tamb = 125 °C 2.5 W Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature range -55 to +175 °C TL Maximum lead temperature for soldering during 10 s 260 °C Table 2. Thermal resistances Symbol Parameter Value Unit Rth(j-l) Junction to leads 20 °C/W Rth(j-a) Junction to ambient on PCB with recommended pad layout 250 V CL VBR VRM I RM I R I PP V I I F V F V CL VBR VRM I RM I R I PP V I I F V F Unidirectional Symbol Parameter V Stand-off voltage V Breakdown voltage V Clamping voltage I Leakage current @ V I Peak pulse current T Voltage temperature coefficient V Forward voltage drop R Dynamic resistance RM BR CL RM RM PP F D a Pulse waveform x/y µs tp = x µs y µs %I 100 50 0 t |
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