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SW12N65DA Arkusz danych(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW12N65DA Arkusz danych(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 6 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2017. Rev. 2.0 1/6 SW12N65DA Absolute maximum ratings Symbol Parameter Value Unit V DSS Drain to source voltage 650 V I D Continuous drain current (@T C=25 oC) 12* A Continuous drain current (@T C=100 oC) 7.6* A I DM Drain current pulsed (note 1) 48 A V GS Gate to source voltage ± 30 V E AS Single pulsed avalanche energy (note 2) 313 mJ E AR Repetitive avalanche energy (note 1) 30 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 39 W Derating factor above 25oC 0.3 W/oC T STG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit R thjc Thermal resistance, Junction to case 3.2 oC/W R thja Thermal resistance, Junction to ambient 47 oC/W *. Drain current is limited by junction temperature. 1. Gate 2. Drain 3. Source Order Codes Item Sales Type Marking Package Packaging 1 SW MN 12N65DA SW12N65DA TO-220SF TUBE N-channel Enhanced mode TO-220SF MOSFET Features High ruggedness Low R DS(ON) (Typ 0.75Ω)@VGS=10V Low Gate Charge (Typ 43nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED, Charge, PC Power General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BV DSS : 650V I D : 12A R DS(ON) :0.75 Ω 1 2 3 TO-220SF 1 2 3 |
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