SW13N50D datasheet(1/6 Pages) SEMIPOWER

Numer części	SW13N50D

Szczegółowy opis	N-channel Enhancement mode TO-220F MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Producent	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Strona internetowa	http://www.samwinsemi.com

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1 / 6 page

Oct. 2015. Rev. 2.0

1/6

SW13N50D

N-channel Enhancement mode TO-220F MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDSS

Drain to Source Voltage

500

V

ID

Continuous Drain Current (@TC=25oC)

13*

A

Continuous Drain Current (@TC=100oC)

8.2*

A

IDM

Drain current pulsed

(note 1)

52

A

VGS

Gate to Source Voltage

±30

V

EAS

Single pulsed Avalanche Energy

(note 2)

408

mJ

EAR

Repetitive Avalanche Energy

(note 1)

35

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

PD

Total power dissipation (@TC=25oC)

43

W

Derating Factor above 25oC

0.34

W/oC

TSTG, TJ

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

oC

TL

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

Rthjc

Thermal resistance, Junction to case

2.9

oC/W

Rthcs

Thermal resistance, Case to Sink

0.5

oC/W

Rthja

Thermal resistance, Junction to ambient

55

oC/W

*. Drain current is limited by junction temperature.

BV

DSS : 500V

I

D

: 13A

R

DS(ON) : 0.46

Ω

1. Gate 2. Drain 3. Source

1

2

3

2 3

TO-220F

Item

Sales Type

Marking

Package

Packaging

1

SW F 13N50D

SW13N50D

TO-220F

TUBE

Order Codes

Features

 High ruggedness

 R

DS(ON) (Typ 0.46Ω)@VGS=10V

 Gate Charge (Typ 47nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:LED,Charger

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

1

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