SW15P02 datasheet(1/7 Pages) SEMIPOWER

Numer części	SW15P02

Szczegółowy opis	P-channel Enhanced mode TO-251/TO-252/DFN33/DFN56 MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Producent	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Strona internetowa	http://www.samwinsemi.com

Logo

1 / 7 page

Mar. 2017. Rev. 3.0

1/7

SW15P02

P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251

TO-252 DFN3*3 DFN5*6

V

DSS

Drain to source voltage

-20

V

I

D

Continuous drain current (@T

C=25

oC)

-15*

A

Continuous drain current (@T

C=100

oC)

-9.5*

A

I

DM

Drain current pulsed

(note 1)

-60

A

V

GS

Gate to source voltage

± 12

V

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

C=25

oC)

69.4

62.5

W

Total power dissipation (@Ta=25oC)

1.5

3.3

W

Derating factor above 25oC

0.6

0.5

0.01

0.03

W/oC

T

STG, TJ

Operating junction temperature & storage temperature

-55 ~ + 150

oC

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251

TO-252 DFN3*3 DFN5*6

R

thjc

Thermal resistance, Junction to case

1.8

2

oC/W

R

thja

Thermal resistance, Junction to ambient

62

81

38

oC/W

*. Drain current is limited by junction temperature.

BV

DSS : -20V

I

D

: -15A

R

DS(ON) : 9.4mΩ @VGS=-4.5V

8.1m

Ω @V

GS=-10V

TO251/252:1. Gate 2. Drain 3. Source

DFN3*3&DFN5*6:4.Gate 5,6,7,8.Drain 1,2,3.Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW I 15P02

SW15P02

TO-251

TUBE

2

SW D 15P02

SW15P02

TO-252

REEL

3

SW H 15P02

SW15P02

DFN3*3

REEL

4

SW HA 15P02

SW15P02

DFN5*6

REEL

Features

 High ruggedness

 Low R

DS(ON) (Typ 9.4mΩ)@VGS=-4.5V

Low R

DS(ON) (Typ 8.1mΩ)@VGS=-10V

 Low Gate Charge (Typ 91nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: DC-DC Converter,

Motor Control

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including

Fast switching time, low on resistance, low gate charge and especially excellent

Avalanche characteristics.

TO-252

1

2

3

TO-251

1

2

3

DFN3*3

DFN5*6

G(4) D(5,6,7,8) S(1,2,3)

Note: R

thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d

efined as the solder mounting surface of the drain pins. R

thjc is guaranteed by design while Rthca is determined by the user‘s

board design. DFN3*3 R

thja 81

oC/W & DFN5*6 R

thja 38

oC/W on a 1 in2 pad of 2oz copper.

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