ACE17446B datasheet(1/7 Pages) ACE

Numer części	ACE17446B

Szczegółowy opis	N-Channel Enhancement Mode Field Effect Transistor

PDF	7 Pages

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Producent	ACE [ACE Technology Co., LTD.]

Strona internetowa	http://www.ace-ele.com

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ACE17446B

N-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

The ACE17446B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications. The source leads are separated to

allow a kelvin connection to the source, which may be used to bypass the source inductance.

ACE17446BPD and ACE17446BNN are electrically identical.

-RoHS Compliant

-Halogen Free

Features



VDS (V) = 30V



VGS (V) = ±20V



ID = 45A (VGS = 10V)



RDS(ON) < 6.5mΩ (VGS = 10V)



RDS(ON) < 10mΩ (VGS = 4.5V)

Absolute Maximum Ratings@TA=25℃ unless otherwise noted

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous)*AC

TA=25℃

ID

45

A

TA=70℃

36

Drain Current (Pulsed)*B

IDM

140

A

Power Dissipation

TA=25℃

PD

25

W

TA=70℃

9

Operating temperature / Storage temperature

TJ/TSTG

-55~150

℃

Packaging Type

PDFN3*3-8L

DFN3*3-8L

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