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May. 2016. Rev. 2.0

1/6

SW8N70K

N-channel Enhanced mode TO-220F/TO-252 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220F

TO-252

V

DSS

Drain to source voltage

700

V

I

D

Continuous drain current (@T

8*

A

Continuous drain current (@T

5*

A

I

DM

Drain current pulsed

(note 1)

32

A

V

GS

Gate to source voltage

30

V

E

AS

Single pulsed avalanche energy

(note 2)

65

mJ

E

AR

Repetitive avalanche energy

(note 1)

7.6

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

22.4

178.6

W

0.18

1.4

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220F

TO-252

R

thjc

Thermal resistance, Junction to case

5.57

0.7

R

thja

Thermal resistance, Junction to ambient

50

*. Drain current is limited by junction temperature.

BV

I

D

: 8A

R

1. Gate 2. Drain 3. Source

TO-220F

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW F 8N70K

SW8N70K

TO-220F

TUBE

2

SW D 8N70K

SW8N70K

TO-252

REEL

1

2

3

Features

High ruggedness

Low R

Low Gate Charge (Typ 21nC)

Improved dv/dt Capability

100% Avalanche Tested

Application:LED, PC Power, Charge

General Description

This power MOSFET is produced with super junction advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

TO-252

1

2

3