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RJK0635DSP Arkusz danych(PDF) 4 Page - Renesas Technology Corp |
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RJK0635DSP Arkusz danych(HTML) 4 Page - Renesas Technology Corp |
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4 / 9 page ![]() RJK0635DSP Preliminary R07DS1345EJ0301 Rev.3.01 page 4 of 7 Nov. 24, 2016 200 160 120 80 40 −25 0 25 50 75 100 125 150 0 0.3 0.1 3 100 10 1 0.1 110 Case Temperature Tc (°C) Static Drain to Source On State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current 25 °C Tc = −25°C 75 °C VDS = 10 V Pulse Test Pulse Test 0 20 30 40 50 60 10000 1000 3000 80 0 8 60 6 20 4 40 2 246 8 10 0 1000 1 10 100 0.1 0.3 1 3 10 300 100 10 30 VGS = 0 f = 1 MHz Ciss Coss Crss Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nC) Dynamic Input Characteristics Drain Current ID (A) Switching Characteristics VDD = 50 V 25 V 10 V td(on) td(off) tf VDD= 50 V 25 V 10 V 10 0 0.2 0.4 0.6 0.8 1.0 10 4 VGS = 0V 2.5V 4.5V Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Pulse Test 2 6 8 tr VGS = 2.5V 4.5V 4.5 VDD VGS ID = 3.5 A 0.5A,1.3A,2.5A ID = 0.5A,1.3A,2.5A |
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