L042 datasheet(2/3 Pages) IXYS

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Symbol

Test Conditions

Characteristic Values

R, ID

R = VRRM; VD = VDRM

VJ = TVJM

5mA

VJ = 25°C

0.3

T, VF

T, IF = 45 A; TVJ = 25°C

1.45

For power-loss calculations only (T

VJ = 125°C)

0.85

D = 6 V;

VJ = 25°C

1.0

VJ = -40°C

1.2

D = 6 V;

VJ = 25°C

VJ = -40°C

VJ = 125°C

VJ = TVJM;VD = 2/3 VDRM

0.2

VJ = TVJM;VD = 2/3 VDRM

5mA

G = 0.3 A; tG = 30 ms;

VJ = 25°C

150

G/dt = 0.3 A/ms;

VJ = -40°C

200

VJ = 125°C

100

VJ = 25°C; VD = 6 V; RGK = ¥£

100

VJ = 25°C; VD = 1/2 VDRM

G = 0.3 A; diG/dt = 0.3 A/ms

VJ = 125°C, IT = 15 A, tP = 300 ms, VR = 100 V

typ.

150

di/dt = -10 A/

ms, dv/dt = 20 V/ms, V

D = 2/3 VDRM

thJC

per thyristor (diode); DC current

1.15

K/W

per module

0.29

K/W

thJK

per thyristor (diode); DC current

1.55

K/W

per module

0.39

K/W

Creeping distance on surface

12.6

Creepage distance in air

6.3

Max. allowable acceleration

m/s2

VHF 36

Fig. 1 Gate trigger range

Fig. 2 Gate controlled delay time t

100

1000

0.1

1: I

GT, TVJ = 125°C

2: IGT, TVJ = 25°C

3: IGT, TVJ = -40°C

4: P

GAV = 0.5 W

5: PGM = 1 W

6: PGM = 10 W

GD, TVJ = 125°C

100

1000

100

1000

µs

VJ = 25°C

typ.

Limit

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