FMMT591 datasheet(3/4 Pages) FCI

3 / 4 page

1.3

2.4

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=-

100µA, IE=0

-80

Collector-emitter breakdown voltage

V(BR)CEO

Ic=-

10mA, IB=0

-60

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA, IC=0

-5

Collector cut-off current

ICBO

VCB=-60V, IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB=-4V, IC=0

-0.1

µA

hFE(1)

VCE=-5V, IC=-1mA

100

hFE(2)

VCE=-5V, IC=-500mA

100

300

hFE(3)

VCE=-5V, IC=-1A

DC current gain

hFE(4)

VCE=-5V, IC=-2A

VCE(sat)1

IC=-500mA, IB=-50mA

-0.3

Collector-emitter saturation voltage

VCE(sat)2

IC=-1A, IB=-100mA

-0.6

Base-emitter saturation voltage

VBE(sat)

IC=-1A, IB=-100mA

-1.2

Base-emitter voltage

VBE

VCE=-5V, IC=-1A

-1

Transition frequency

VCE=-10V,IC=-50mA,,f=100MHz

150

MHz

Collector output capacitance

Cob

VCB=-10V,f=1MHz

1Measured under pulsed conditions, Pulse width=300µs, Duty cycle≤2%.

Unit: mm

SOT-23

Data Sheet

Collector-base voltage

V (BR)CBO:

-80

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

MARKING:591

FEATURES

Power dissipation

PCM: 0.5

W (Tamb=25

℃)

Collector current

I CM: -1

COLLECTOR

EMITTER

BASE

FMMT591 PNP TRANSISTOR

Description

Mechanical Dimensions

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