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2SC2884 Arkusz danych(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

Numer części 2SC2884
Szczegółowy opis  Silicon PNP transistor in a SOT-89 Plastic Package
PDF  6 Pages
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Producent  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Strona internetowa  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SC2884 Arkusz danych(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

  2SC2884 Datasheet HTML 1Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SC2884 Datasheet HTML 2Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SC2884 Datasheet HTML 3Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SC2884 Datasheet HTML 4Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SC2884 Datasheet HTML 5Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SC2884 Datasheet HTML 6Page - Foshan Blue Rocket Electronics Co.,Ltd.  
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2SC2884
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
35
V
Collector to Emitter Voltage
VCEO
30
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current-Continuous
IC
800
mA
Collector Base-Continuous
IB
160
mA
Collector Power Dissipation
PC
0.5
W
Collector Power Dissipation*
*PC
1.0
W
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
*:mounted on 16cm2×7mm ceramic substrate.
*:
置于 16cm2×7mm 的陶瓷板上。
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector Cut-Off Current
ICBO
VCB=35V
IE=0
0.1
μA
Emitter Base Cut-Off Current
IEBO
VEB=5.0V
IC=0
0.1
μA
Collector to Emitter Voltage
VCEO
IC=10mA
IB=0
30
V
DC Current Gain
hFE(1)
VCE=1.0V
IC=100mA
100
320
hFE(2)
VCE=1.0V
IC=700mA
35
Collector to Emitter Saturation
Voltage
VCE(sat) IC=500mA
IB=20mA
0.5
V
Emitter to Base Saturation Voltage
VBE
IC=1.0V
IB=10mA
0.5
0.8
V
Transition Frequency
fT
VCE=5.0V
IC=10mA
120
MHz
Collector Output Capacitance
Cob
VCB=10V
IE=0
f=1MHz
13
pF
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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