2SA950 datasheet(2/6 Pages) FOSHAN

Numer części	2SA950

Szczegółowy opis	Silicon PNP transistor in a TO-92 Plastic Package

PDF	6 Pages

Scroll/Zoom	100%

Producent	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Strona internetowa	http://www.fsbrec.com/

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2 / 6 page

2SA950

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-35

Collector to Emitter Voltage

VCEO

-30

Emitter to Base Voltage

VEBO

-5.0

Collector Current - Continuous

-800

Emitter Current - Continuous

800

Collector Power Dissipation

600

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=-10mA

IB=0

-30

Collector Cut-Off Current

ICBO

VCB=-35V

IE=0

-0.1

μA

Emitter Cut-Off Current

IEBO

VEB=-5.0V

IC=0

-0.1

μA

DC Current Gain

hFE(1)

VCE=-1.0V

IC=-100mA

100

320

hFE(2)

VCE=-1.0V

IC=-700mA

Collector to Emitter Saturation

Voltage

VCE(sat) IC=-500mA

IB=-20mA

-0.7

Base to Emitter Saturation Voltage

VBE

VCE=-1.0V

IC=-10mA

-0.5

-0.8

Transition Frequency

VCE=-5.0V

IC=-10mA

120

MHz

Output Capacitance

Cob

VCB=-10V

IE=0

f=1.0MHz

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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