SCP35N03J datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SCP35N03J

35A, 30V, RDS(ON) 7mΩ

Ω

N-Channel Enhancement Mode Power MOSFET

02-Jun-2017 Rev. D

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0, ID=250µA

Zero Gate Voltage Drain Current

IDSS

µA

VDS=30V, VGS=0

Gate-Body Leakage Current

IGSS

±100

VDS=0V, VGS= ±20V

On Characteristics

Gate-Threshold Voltage

VGS(th)

1.6

VDS=VGS, ID=250µA

5.5

VGS=10V, ID=12A

Static Drain-Source On-Resistance

RDS(ON)

8.2

9.5

VGS=4.5V, ID=10A

Forward Transconductance

gfs

VDS=10V, ID=12A

Dynamic Characteristics

Input Capacitance

Ciss

1265

Output Capacitance

Coss

600

Reverse Transfer Capacitance

Crss

130

VDS=15V

VGS=0

f=1MHz

Switching Characteristics

Total Gate Charge

Gate-Source Charge

Qgs

2.7

Gate-Drain Charge

Qgd

2.5

VDS=15V

VGS=10V

ID=12A

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD=15V

VGS=10V

RG=6

ID=12A

Drain-Source Diode Characteristics

Diode Forward Voltage

VSD

0.85

1.2

VGS=0, IS=12A

Continuous Drain-Source Diode

Forward Current

Pulsed Drain-Source Diode

Forward Current

ISM

120

Notes:

Pulse test : Pulse width≦300µs, duty cycle≦2%.

The surface of the device is mounted on a FR4 board, t≦10 sec.

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