SSD01N65J datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SSD01N65J

1A, 650V, RDS(ON) 14

N-Ch Enhancement Mode Power MOSFET

4-Nov-2015 Rev.A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

650

VGS=0, ID=250µA

Diode Forward Voltage

VSD

1.5

VGS=0, IS=1A

Zero Gate Voltage Drain Current

IDSS

100

µA

VDS=600V, VGS=0

Gate-Body Leakage Current

IGSS

±100

VDS=0V, VGS= ±20V

On Characteristics

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Static Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=0.6A

Dynamic Characteristics

Input Capacitance

Ciss

210

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

4.2

VDS=25V

VGS=0

f=1MHz

Switching Characteristics

Total Gate Charge

Gate-Source Charge

Qgs

2.7

Gate-Drain Charge

Qgd

VDS=480V

VGS=10V

ID=4A

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD=300V

VGS=10V

RG=18

ID=1A

Notes:

EAS condition: L=10mH, IL=1A, VDD=50V, VGS=10V, RG=25 , Starting TJ=25°C.

Pulse test：Pulse width≦300µs, duty cycle≦2%.

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