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2SB1283 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części 2SB1283
Szczegółowy opis  isc Silicon PNP Darlingtion Power Transistor
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB1283 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SB1283 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB1283 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Darlingtion Power Transistor
2SB1283
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -30mA; IB= 0
-100
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -3A; IB= -5mA
-1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -3A; IB= -5mA
-2.0
V
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
-100
μ
A
ICEO
Collector Cutoff Current
VCE= -100V; RBE= ∞
-100
μ
A
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
-5.0
mA
hFE
DC Current Gain
IC= -3A; VCE= -3V
1500
15000
fT
Current-Gain—Bandwidth Product
IC= -0.7A; VCE= -10V
20
MHz
Switching Times
ton
Turn-on Time
IC= -3.0A ,IB1= -IB2= -5mA,
VCC≈ -40V; RL= 10Ω
1.0
μ
s
tstg
Storage Time
4.0
μ
s
tf
Fall Time
2.0
μ
s



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