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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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BCP040C Arkusz danych(PDF) 1 Page - BeRex Corporation |
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BCP040C Arkusz danych(HTML) 1 Page - BeRex Corporation |
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1 / 4 page  www.berex.com BeRex, Inc. 3350 Scott Blvd. #6101 Santa Clara 95054 tel. (408) 452-5595 February 2017 Specifications are subject to change without notice. ©BeRex 2017 Rev. 1.1 ㅏ BCP040C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 400µm) The BeRex BCP040C is a GaAs Power pHEMT with a nominal 0.25-micron by 400-micron gate making this product ideally suited for applications where high-gain and medium power in the DC to 26.5 GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP040C is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability . PRODUCT FEATURES • 25.5 dBm Typical Output Power • 13.5 dB Typical Gain @ 12 GHz • 0.25 X 400 Micron Recessed Gate APPLICATIONS • Commercial • Military / Hi-Rel. • Test & Measurement ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C PARAMETER/TEST CONDITIONS TEST FREQ. MIN. TYPICAL MAX. UNIT P1dB Output Power @ P1dB (Vds = 8V, Ids = 60mA) 12 GHZ 18 GHz 24.0 23.5 25.5 25.0 dBm G1dB Gain @ P1dB (Vds = 8V, Id = 60mA) 12 GHZ 18 GHz 12.0 8.5 13.5 10 dB PAE PAE @ P1dB (Vds = 8V, Id = 60mA) 12 GHZ 18 GHz 60 50 % NF Noise figure (Vds = 2V, Id = 20 mA) 12 GHz 1.05 dB Idss Saturated Drain Current (Vgs = 0V, Vds = 2.0V) 70 110 150 mA Gm Transconductance (Vds = 2V, Id = 60mA) 155 mS Vp Pinch-off Voltage (Ids = 0.4mA, Vds = 2V) -2.5 -1.2 V BVgd Drain Breakdown Voltage (Ig = -0.4mA, source open) -15 -12 V BVgs Source Breakdown Voltage (Ig = -0.4mA, drain open) -13 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 104 °C/W |
Podobny numer części - BCP040C |
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Podobny opis - BCP040C |
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