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12N65 Arkusz danych(PDF) 2 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

Numer części 12N65
Szczegółowy opis  N-Channel MOSFET
PDF  4 Pages
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Producent  CHENDA [Microdiode Semiconductor (Shenzhen) Co., Ltd]
Strona internetowa  http://www.microdiode.com/en
Logo CHENDA - Microdiode Semiconductor (Shenzhen) Co., Ltd

12N65 Arkusz danych(HTML) 2 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

  12N65 Datasheet HTML 1Page - Microdiode Semiconductor (Shenzhen) Co., Ltd 12N65 Datasheet HTML 2Page - Microdiode Semiconductor (Shenzhen) Co., Ltd 12N65 Datasheet HTML 3Page - Microdiode Semiconductor (Shenzhen) Co., Ltd 12N65 Datasheet HTML 4Page - Microdiode Semiconductor (Shenzhen) Co., Ltd  
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12N65 Series
N-Channel MOSFET
nC
Qgs
--
Turn-On Rise Time
IDSS
Zero Gate Voltage Drain Current
VDS=520V, TC=125℃
--
--
VDS=650V, VGS=0V
190
30
μA
--
--
1
10
140
--
100
180
Input Capacitance
VDS=25V
VGS=0V
f=1.0MHz
38
--
Gate-Source Charge
--
Qg
Turn-Off Fall Time
VDS=520V
ID=12A, VGS=10V
(Note 4,5)
--
--
Continuous Source-Drain Diode Forward Current
tf
Total Gate Charge
td(off)
Turn-Off Delay Time
Source-Drain Diode Maximum Ratings and Characteristics
VDS=325V
ID=12A
RG=25Ω
(Note 4,5)
Qgd
Gate-Drain Charge
--
0.5
td(on)
85
Crss
Reverse Transfer Capacitance
--
Coss
tr
--
Turn-On Time
nS
VGS=10V, ID=6A
V/℃
ID=250μA, Referenced to 25℃
0.67
--
0.78
2385
pF
Switching Characteristics
Ciss
--
--
240
185
Output Capacitance
ISM
--
Pulsed Source-Drain Diode Forward Current
Dynamic Characteristics
--
48
21
1835
IS
--
Test Conditions
Parameter
■
Electrical Characteristics（TC=25℃ unless otherwise specified）
Typ.
Min.
Units
Max.
V
VGS
Gate Threshold Voltage
VDS=VGS, ID=250μA
Symbol
4.0
--
△
BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
　 Notes:
　 1. Repetitive Rating: Pulse width limited by maximum junction temperature
　 2. L=11mH, I AS =12A, V DD =50V, R G =25Ω, Starting T J =25 ℃
　 3. I SD ≤ 12A, di/dt ≤ 200A/μS, V DD ≤ BV DSS , Starting T J =25 ℃
　 4. Pulse Test: Pulse Width ≤ 300μS, Duty Cycle ≤ 2%
　 5. Essentially Independent of Operating Temperature
--
IS=12A, VGS=0V
diF/dt=100μA/μs (Note 4)
--
nS
420
Qrr
4.9
--
μC
VSD
Source-Drain Diode Forward Voltage
Reverse Recovery Charge
trr
--
--
Reverse Recovery Time
IS=12A, VGS=0V
--
Gate-Body Leakage Current, Forward
13
--
90
--
16
70
--
280
49
8
--
1.4
V
A
--
12
V
Ω
--
2.0
On Characteristics
650
--
VGS=0V, ID=250μA
nA
--
IGSSR
Gate-Body Leakage Current, Reverse
--
IGSSF
VGS= +30V, VDS=0V
VGS= -30V, VDS=1V
--
-100
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