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DISN0165SP Arkusz danych(PDF) 2 Page - Cystech Electonics Corp.

Numer części DISN0165SP
Szczegółowy opis  Switching Control Diode
PDF  7 Pages
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Producent  CYSTEKEC [Cystech Electonics Corp.]
Strona internetowa  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

DISN0165SP Arkusz danych(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C211SP
Issued Date : 2017.11.08
Revised Date :
Page No. : 2/7
DISN0165SP
Preliminary
CYStek Product Specification
Absolute Maximum Ratings (TA=25℃, unless otherwise noted)
Parameters
Conditions
Symbol
Value
Units
Repetitive peak reverse voltage
VRRM
650
V
RMS voltage
VRMS
455
V
Continuous reverse voltage
VR
650
V
Forward rectified current
Single phase half wave,
60Hz @TJ=25°C
IF(AV)
1
A
Repetitive Peak Forward Current
Single phase half wave,
60Hz @TJ=25°C
IFRM
1.57
A
Forward surge current
8.3ms single half sine-wave
superimposed on rated load
(JEDEC method)
IFSM
14
A
Maximum reverse recovery time
IF=1A, dIF/dt=100A/μs
trr
1
μs
Storage temperature range
Tstg
-55~+150
C
Operating junction temperature range
Tj
-55~+150
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
12.5
C/W
Thermal Resistance, Junction-to-ambient, max (Note 1 )
Rth,j-a
39
Thermal Resistance, Junction-to-ambient, max (Note 2 )
75
Thermal Resistance, Junction-to-ambient, max (Note 3)
169
Power Dissipation @ TC=25°C
PD
10
W
Power Dissipation @ TA=25°C
(Note 1 )
3.2
Power Dissipation @ TA=25°C
(Note 2 )
1.7
Power Dissipation @ TA=25°C
(Note 3 )
0.74
Note: 1. Device mounted on FR-4 PCB, single sided 2 oz. copper, pad dimension 50mm×50mm.
2. Device mounted on FR-4 PCB, single sided 1 oz. copper, pad dimension 25mm×25mm.
3. Device mounted on FR-4 PCB, single sided 1 oz. copper, minimum recommended pad dimension.
Characteristics (TA=25C, unless otherwise noted)
Characteristic
Symbol
Condition
Min.
Typ
Max.
Unit
Continuous reverse voltage
VR
IR=100μA
650
-
-
V
Forward Voltage
VF 1
IF=100mA
-
-
1.1
V
VF 2
IF=500mA
-
-
1.2
Reverse Leakage Current
IR
VR=540V
-
-
100
nA
VR=540V, TA=125C
-
-
10
μA
Junction Capacitance
CJ
VR=1V, f=1MHz
-
7
-
pF



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