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JCS1HN60R-O-R-N-B Arkusz danych(PDF) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS1HN60R-O-R-N-B Arkusz danych(HTML) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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5 / 14 page ![]() R JCS1HN60 版本:201607A 5/13 0.1 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 25℃ 150℃ V SD [V] 特征曲线 ELECTRICAL CHARACTERISTICS (curves) 1 10 0.1 1 V GS Top 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V Notes: 1. 250μs pulse test 2. T C=25 ℃ V DS [V] 2 4 6 8 10 0.1 1 10 Notes: 1.250μs pulse test 2.V DS=40V V GS [V] 25℃ 150℃ Transfer Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics Gate Charge Characteristics On-Region Characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 7 V DS=120V V DS=300V V DS=480V Q g Toltal G ate C harg e [nC ] 0.0 0.5 1.0 1.5 2.0 10 11 12 13 14 15 16 Note :T j=25 ℃ V GS=10V I D [A] V GS=20V |
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