BLF1049 datasheet(4/12 Pages) PHILIPS

4 / 12 page

2003 May 14

Philips Semiconductors

Product speciﬁcation

Base station LDMOS transistor

BLF1049

handbook, halfpage

010

(dB)

MLE061

ηD

(%)

ηD

PL (AV)(W)

Fig.2

GSM EDGE power gain and efficiency as

functions of load power; typical values.

VDS = 27 V; f = 920 MHz; IDQ = 750 mA; Th ≤ 25 °C.

handbook, halfpage

010

PL (AV)(W)

−62

−64

−68

−70

−66

MLE062

EVMrms

(AV)

(%)

ACPR

400

(dBc)

1.5

0.5

EVM

ACPR400

Fig.3

GSM EDGE ACPR400 and EVM as

functions of average load power; typical

values.

VDS = 27 V; f = 920 MHz; IDQ = 750 mA; Th ≤ 25 °C.

handbook, halfpage

100

150

MLE063

PL (AV) (W)

(dB)

ηD

(%)

ηD

Fig.4

1-tone CW power gain and efficiency as

functions of load power; typical values.

VDS = 27 V; f = 920 MHz; IDQ = 1000 mA;

handbook, halfpage

100

150

16.5

15.5

14.5

MLE064

gain

(dB)

PL (PEP) (W)

(%)

(4)

η(1,2,3)

(5)

(6)

Fig.5

2-tone power gain and efficiency as

functions of load power at different

temperatures.

VDS = 27 V; IDQ = 1.1 A; f1 = 920.0 MHz; f2 = 920.1 MHz.

(1)

η at Th = −40 °C.

(2)

η at Th =20 °C.

(3)

η at Th =80 °C.

(4) gain at Th = −40 °C.

(5) gain at Th =20 °C.

(6) gain at Th =80 °C.

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