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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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AT738HT Arkusz danych(PDF) 1 Page - Power Semiconductors |
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AT738HT Arkusz danych(HTML) 1 Page - Power Semiconductors |
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1 / 4 page  PHASE CONTROL THYRISTOR AT738HT Repetitive voltage up to 2200 V Mean forward current 3669 A Surge current 60 kA FINAL SPECIFICATION Feb. 17 - Issue: 4 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 2200 V V RSM Non-repetitive peak reverse voltage 125 2300 V V DRM Repetitive peak off-state voltage 125 2200 V I RRM Repetitive peak reverse current V=VRRM 125 200 mA I DRM Repetitive peak off-state current V=VDRM 125 200 mA CONDUCTING I T (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 3669 A I T (AV) Mean forward current 180° sin ,50 Hz, Tc=85°C, double side cooled 2859 A I TSM Surge forward current Sine wave, 10 ms 125 60 kA I² t I² t without reverse voltage 18000 x 10 3 A²s V T On-state voltage On-state current = 2000 A 25 1,10 V V T(TO) Threshold voltage 125 0,92 V r T On-state slope resistance 125 0,090 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 3000 A; gate 10V, 5 W 125 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 75% of VDRM 125 500 V/µs t d Gate controlled delay time, typical VD=100V; gate source 25V, 10 W , tr=.5 µs 25 3 µs t q Circuit commutated turn-off time, typical dv/dt = 20 V/µs linear up to 80% VDRM 320 µs Q rr Reverse recovery charge di/dt = -20 A/µs, I= 2000 A 125 µC I rr Peak reverse recovery current VR= 50 V A I H Holding current, typical VD=5V, gate open circuit 25 300 mA I L Latching current, typical VD=5V, tp=30µs 25 700 mA GATE V GT Gate trigger voltage VD=5V 25 3,50 V I GT Gate trigger current VD=5V 25 350 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 30 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) 5 V P GM Peak gate power dissipation Pulse width 100 µs 150 W P G Average gate power dissipation 2 W MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 11 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 2 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 40.0 / 50.0 kN Mass 1500 g ORDERING INFORMATION : AT738HT S 22 standard specification VRRM/100 POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - sales@poseico.com |
Podobny numer części - AT738HT |
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Podobny opis - AT738HT |
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