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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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ATF587 Arkusz danych(PDF) 1 Page - Power Semiconductors |
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ATF587 Arkusz danych(HTML) 1 Page - Power Semiconductors |
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1 / 3 page  FAST SWITCHING THYRISTOR ATF587 Repetitive voltage up to 1200 V Mean on-state current 350 A Surge current 5 kA FINAL SPECIFICATION Turn-off time 25 µs mag 06 - ISSUE : 5 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 1200 V V RSM Non-repetitive peak reverse voltage 125 1300 V V DRM Repetitive peak off-state voltage 125 1200 V I RRM Repetitive peak reverse current V=VRRM 125 40 mA I DRM Repetitive peak off-state current V=VDRM 125 40 mA CONDUCTING I T (AV) Mean on-state current 180°sin, 50 Hz, Th=55°C, double side cooled 350 A I T (AV) Mean on-state current 180°sin, 500 Hz, Th=55°C, double side cooled 315 A I TSM Surge on-state current, non repetitive sine wave, 10 ms 125 4,5 kA I² t I² t without reverse voltage 101 x1E3 A²s V T On-state voltage On-state current = 800 A 25 2,15 V V T(TO) Threshold voltage 125 1,38 V r T On-state slope resistance 125 0,830 mohm SWITCHING di/dt Critical rate of rise of on-state current, min From 75% VDRM up to 900 A, gate 20V 10 ohm 125 200 A/µs dv/dt Critical rate of rise of off-state voltage, min Linear ramp up to 70% of VDRM 125 500 V/µs td Gate controlled delay time, typical VD=100V, gate source 20V, 10 ohm , tr=1 µs 25 0,4 µs tq Circuit commutated turn-off time di/dt = 20 A/µs, I= 1000 A I = 250 A 125 25 µs dV/dt = 200 V/µs , up to 75% VDRM Q rr Reverse recovery charge di/dt = 60 A/µs, I= 1000 A I = 1000 A 125 190 µC I rr Peak reverse recovery current VR = 50 V 139 A I H Holding current, typical VD=5V, gate open circuit 25 45 mA I L Latching current, typical VD=12V, tp=30µs 25 70 mA GATE V GT Gate trigger voltage VD=5V 25 3,5 V I GT Gate trigger current VD=5V 25 350 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 25 30 V I FGM Peak gate current 25 10 A V RGM Peak gate voltage (reverse) 25 5 V P GM Peak gate power dissipation Pulse width 100 µs 25 150 W P G(AV) Average gate power dissipation 25 3 W MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 95 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 4.5 / 5.0 kN Mass 55 g tq code D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs ORDERING INFORMATION : ATF587 S 12 L tq code M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs standard specification VDRM&VRRM/100 T 60 µs U 70 µs W 80 µs X 100µs Y 150µs POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6445141 |
Podobny numer części - ATF587 |
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Podobny opis - ATF587 |
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