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STU664S Arkusz danych(PDF) 2 Page - SamHop Microelectronics Corp.

Numer części STU664S
Szczegółowy opis  N-Channel Logic Level Enhancement Mode Field Effect Transistor
PDF  8 Pages
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Producent  SAMHOP [SamHop Microelectronics Corp.]
Strona internetowa  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STU664S Arkusz danych(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
60
V
1
IGSS
±100
nA
VGS(th)
V
16
gFS
S
CISS
2190
pF
COSS
140
pF
CRSS
105
pF
Qg
47
nC
31
62
13
tD(ON)
36
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=15A
VDS=10V , ID=15A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
20
b
f=1.0MHz
b
www.samhop.com.tw
2
VSD
nC
Qgs
nC
Qgd
6
12
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=30V,ID=15A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=6A
0.81
1.3
V
Notes
VDS=30V,ID=15A,VGS=10V
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
2
2.6
4
22
Jun,05,2013
Ver 1.0
STU664S
STD664S



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