| Producent | Numer części | Arkusz danych | Szczegółowy opis |
 NXP Semiconductors |
BAS101
|
66Kb/11P
|
High-voltage switching diodes
Rev. 01-8 September 2006
|
 Nexperia B.V. All right... |
BAS101
|
665Kb/11P
|
High-voltage switching diodes
Rev. 02 - 14 December 2009
|
 NXP Semiconductors |
BAS101S
|
66Kb/11P
|
High-voltage switching diodes
Rev. 01-8 September 2006
|
|
BAS101S
|
126Kb/11P
|
High-voltage switching diodes
Rev. 02-14 December 2009
|
 Nexperia B.V. All right... |
BAS101S
|
665Kb/11P
|
High-voltage switching diodes
Rev. 02 - 14 December 2009
|
 NXP Semiconductors |
BAS101
|
126Kb/11P
|
High-voltage switching diodes
Rev. 02-14 December 2009
|
|
BAS101_BAS101S
|
126Kb/11P
|
High-voltage switching diodes
Rev. 02-14 December 2009
|
| Search Partnumber :
Start with "BAS101" -
Total : 100 ( 1/5 Page) |
 Pan Jit International I... |
BAS100AS
|
149Kb/5P |
SURFACE MOUNT SCHOTTKY DIODES
|
|
BAS100AS-AU
|
150Kb/5P |
SURFACE MOUNT SCHOTTKY DIODES
|
|
BAS100AS-AU_R1_000A1
|
150Kb/5P |
SURFACE MOUNT SCHOTTKY DIODES
|
|
BAS100AS_R1_00001
|
149Kb/5P |
SURFACE MOUNT SCHOTTKY DIODES
|
|
BAS100ATB6
|
131Kb/5P |
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
|
|
BAS100ATB6
|
329Kb/5P |
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
August 10,2022 |
|
BAS100ATB6
|
143Kb/5P |
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
|
|
BAS100ATB6_R1_00001
|
143Kb/5P |
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
|
|
BAS100ATB6_R1_00001
|
329Kb/5P |
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
August 10,2022 |
|
BAS100ATB6_R2_00001
|
143Kb/5P |
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
|
|
BAS100ATB6_R2_00001
|
329Kb/5P |
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
August 10,2022 |
|
BAS100ATB6
|
329Kb/5P |
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
August 10,2022 |
|
BAS100CS
|
147Kb/5P |
SURFACE MOUNT SCHOTTKY DIODES
|