| Producent | Numer części | Arkusz danych | Szczegółowy opis |
 IP SEMICONDUCTOR CO., L... |
IPT0806-CEB
|
216Kb/4P
|
High current density due to double mesa technology
|
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Start with "IPT0806-CEB" -
Total : 28 ( 1/2 Page) |
 IP SEMICONDUCTOR CO., L... |
IPT0806-CEA
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216Kb/4P |
High current density due to double mesa technology
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IPT0806-CED
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217Kb/5P |
High current density due to double mesa technology
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IPT0806-CEF
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218Kb/4P |
High current density due to double mesa technology
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IPT0806-CEI
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220Kb/4P |
High current density due to double mesa technology
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IPT0806-10A
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216Kb/4P |
High current density due to double mesa technology
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IPT0806-BEA
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216Kb/4P |
High current density due to double mesa technology
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IPT0806-BEB
|
216Kb/4P |
High current density due to double mesa technology
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IPT0806-BED
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217Kb/5P |
High current density due to double mesa technology
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IPT0806-BEF
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218Kb/4P |
High current density due to double mesa technology
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IPT0806-BEI
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220Kb/4P |
High current density due to double mesa technology
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IPT0806-SEA
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216Kb/4P |
High current density due to double mesa technology
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IPT0806-SEB
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216Kb/4P |
High current density due to double mesa technology
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IPT0806-SED
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217Kb/5P |
High current density due to double mesa technology
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IPT0806-SEF
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218Kb/4P |
High current density due to double mesa technology
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IPT0806-SEI
|
220Kb/4P |
High current density due to double mesa technology
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IPT0808-BEB
|
216Kb/4P |
High current density due to double mesa technology
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IPT0808-BED
|
217Kb/5P |
High current density due to double mesa technology
|
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IPT0808-BEF
|
218Kb/4P |
High current density due to double mesa technology
|
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IPT0808-BEI
|
220Kb/4P |
High current density due to double mesa technology
|