| Producent | Numer części | Arkusz danych | Szczegółowy opis |
 GE Solid State |
IRFD112
|
112Kb/2P
|
POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
|
| Search Partnumber :
Start with "IRFD112" -
Total : 85 ( 1/5 Page) |
 Intersil Corporation |
IRFD110
|
52Kb/6P |
1A, 100V, 0.600 Ohm, N-Channel Power MOSFET
July 1999 |
 International Rectifier |
IRFD110
|
174Kb/6P |
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A)
|
 Vishay Siliconix |
IRFD110
|
132Kb/8P |
Power MOSFET
21-Jul-08 |
|
IRFD110
|
156Kb/9P |
Power MOSFET
30-Aug-2021 |
 International Rectifier |
IRFD110PBF
|
1Mb/8P |
HEXFET Power MOSFET
|
 Vishay Siliconix |
IRFD110PBF
|
132Kb/8P |
Power MOSFET
21-Jul-08 |
|
IRFD110PBF
|
156Kb/9P |
Power MOSFET
30-Aug-2021 |
|
IRFD110
|
156Kb/9P |
Power MOSFET
30-Aug-2021 |
 GE Solid State |
IRFD113
|
112Kb/2P |
POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
|
 Vishay Siliconix |
IRFD113
|
250Kb/8P |
Power MOSFET
19-Dec-11 |
|
IRFD113
|
253Kb/8P |
Power MOSFET
30-Aug-2021 |
|
IRFD113PBF
|
253Kb/8P |
Power MOSFET
30-Aug-2021 |
|
IRFD113
|
253Kb/8P |
Power MOSFET
30-Aug-2021 |
 Intersil Corporation |
IRFD120
|
52Kb/6P |
1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
July 1999 |
 International Rectifier |
IRFD120
|
176Kb/6P |
Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A)
|
 Fairchild Semiconductor |
IRFD120
|
91Kb/7P |
1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
|
 Harris Corporation |
IRFD120
|
360Kb/6P |
1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs
|
 Vishay Siliconix |
IRFD120
|
1Mb/8P |
Power MOSFET
07-Jul-08 |
|
IRFD120
|
1Mb/9P |
Power MOSFET
08-Nov-10 |