| Producent | Numer części | Arkusz danych | Szczegółowy opis |
 Diotec Semiconductor |
ZX12
|
112Kb/2P
|
Silicon-Power-Z-Diodes (non-planar technology)
|
|
ZX12
|
114Kb/2P
|
Silicon-Power-Z-Diodes (non-planar technology)
|
 New Jersey Semi-Conduct... |
ZX12
|
166Kb/2P
|
Silicon Power Z Diodes
|
 Ashcroft, Inc. |
ZX12
|
697Kb/4P
|
ZX12 High Purity Pressure Transmitter with Increased Safety Approval for Hazardous Locations
RevC_6-24-24
|
 Diotec Semiconductor |
ZX120
|
112Kb/2P
|
Silicon-Power-Z-Diodes (non-planar technology)
|
|
ZX120
|
114Kb/2P
|
Silicon-Power-Z-Diodes (non-planar technology)
|
 New Jersey Semi-Conduct... |
ZX120
|
166Kb/2P
|
Silicon Power Z Diodes
|
 Ashcroft, Inc. |
ZX123FVS42E40
|
697Kb/4P
|
ZX12 High Purity Pressure Transmitter with Increased Safety Approval for Hazardous Locations
RevC_6-24-24
|
|
ZX123FVS42E41
|
697Kb/4P
|
ZX12 High Purity Pressure Transmitter with Increased Safety Approval for Hazardous Locations
RevC_6-24-24
|
|
ZX123MVF42E40
|
697Kb/4P
|
ZX12 High Purity Pressure Transmitter with Increased Safety Approval for Hazardous Locations
RevC_6-24-24
|
|
ZX123MVF42E41
|
697Kb/4P
|
ZX12 High Purity Pressure Transmitter with Increased Safety Approval for Hazardous Locations
RevC_6-24-24
|
|
ZX123MVS42E40
|
697Kb/4P
|
ZX12 High Purity Pressure Transmitter with Increased Safety Approval for Hazardous Locations
RevC_6-24-24
|
|
ZX123MVS42E41
|
697Kb/4P
|
ZX12 High Purity Pressure Transmitter with Increased Safety Approval for Hazardous Locations
RevC_6-24-24
|
|
ZX123MVT42E40
|
697Kb/4P
|
ZX12 High Purity Pressure Transmitter with Increased Safety Approval for Hazardous Locations
RevC_6-24-24
|
|
ZX123MVT42E41
|
697Kb/4P
|
ZX12 High Purity Pressure Transmitter with Increased Safety Approval for Hazardous Locations
RevC_6-24-24
|
 Yea Shin Technology Co.... |
ZX12V
|
815Kb/5P
|
500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators
|