| Producent | Numer części | Arkusz danych | Szczegółowy opis |
Advanced Power Technolo... |
APT1001
|
35Kb/2P |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
|
|
APT1001
|
50Kb/4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
Inchange Semiconductor ... |
APT1001R1AN
|
309Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Technolo... |
APT1001R1AVR
|
68Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
|
APT1001R1BN
|
52Kb/4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
Inchange Semiconductor ... |
APT1001R1BN
|
359Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R1BNR
|
371Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Technolo... |
APT1001R1BVFR
|
70Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Inchange Semiconductor ... |
APT1001R1DN
|
326Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R1GN
|
331Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R1HN
|
297Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Technolo... |
APT1001R1HVR
|
66Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Inchange Semiconductor ... |
APT1001R2AN
|
309Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R2BN
|
359Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R2HN
|
360Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R3AN
|
309Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Technolo... |
APT1001R3BN
|
52Kb/4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
Inchange Semiconductor ... |
APT1001R3BN
|
359Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R3HN
|
297Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Technolo... |
APT1001R6BFLL
|
153Kb/5P |
POWER MOS 7 R FREDFET
|
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