| Producent | Numer części | Arkusz danych | Szczegółowy opis |
GTM CORPORATION |
GI88L02
|
248Kb/5P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
E-Tech Electronics LTD |
GI882
|
240Kb/3P |
N P N E P I T A X I A L P L A N A R T R A N S I S T O R
|
GTM CORPORATION |
GI882
|
236Kb/3P |
NPN EPITAXIAL PLANAR TRANSISTOR
|
|
GI8050
|
161Kb/2P |
NPN EPITAXIAL TRANSISTOR
|
E-Tech Electronics LTD |
GI8050
|
163Kb/2P |
N P N E P I T A X I A L T R A N S I S T O R
|
GTM CORPORATION |
GI80L02
|
245Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
GI80N03
|
246Kb/5P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
General Semiconductor |
GI810
|
63Kb/2P |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
|
Vishay Siliconix |
GI810
|
75Kb/4P |
Glass Passivated Junction Fast Switching Rectifier
15-Mar-11 |
|
GI810
|
74Kb/4P |
Glass Passivated Junction Fast Switching Rectifier
13-Jun-16 |
|
GI810
|
74Kb/4P |
Glass Passivated Junction Fast Switching Rectifier
13-Jun-16 |
General Semiconductor |
GI811
|
63Kb/2P |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
|
Vishay Siliconix |
GI811
|
75Kb/4P |
Glass Passivated Junction Fast Switching Rectifier
15-Mar-11 |
|
GI811
|
74Kb/4P |
Glass Passivated Junction Fast Switching Rectifier
13-Jun-16 |
General Semiconductor |
GI812
|
63Kb/2P |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
|
Vishay Siliconix |
GI812
|
75Kb/4P |
Glass Passivated Junction Fast Switching Rectifier
15-Mar-11 |
|
GI812
|
74Kb/4P |
Glass Passivated Junction Fast Switching Rectifier
13-Jun-16 |
General Semiconductor |
GI814
|
63Kb/2P |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
|
Vishay Siliconix |
GI814
|
75Kb/4P |
Glass Passivated Junction Fast Switching Rectifier
15-Mar-11 |
|
GI814
|
74Kb/4P |
Glass Passivated Junction Fast Switching Rectifier
13-Jun-16 |
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