| Producent | Numer części | Arkusz danych | Szczegółowy opis |
 IP SEMICONDUCTOR CO., L... |
IPT04Q06-TEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q06-TEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q06-TEI
|
230Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q06-AEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q06-AEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q06-AED
|
228Kb/5P |
High current density due to double mesa technology
|
|
IPT04Q06-AEI
|
230Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q06-DEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q06-DEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q06-DED
|
228Kb/5P |
High current density due to double mesa technology
|
|
IPT04Q06-DEI
|
230Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q06-SEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q06-SEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q06-SED
|
228Kb/5P |
High current density due to double mesa technology
|
|
IPT04Q06-SEI
|
230Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q08-AEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q08-AEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q08-AED
|
228Kb/5P |
High current density due to double mesa technology
|
|
IPT04Q08-AEI
|
230Kb/4P |
High current density due to double mesa technology
|
|
IPT04Q08-DEA
|
226Kb/4P |
High current density due to double mesa technology
|