IRF331 Arkusz danych, PDF

Producent	Numer części	Arkusz danych	Szczegółowy opis
Samsung semiconductor	IRF331	208Kb/5P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF331	177Kb/6P	N-Channel Power MOSFETs, 5.5A, 350 V/400V
New Jersey Semi-Conduct...	IRF331	848Kb/3P	N-Channel Power MOSFETs, 5.5 A, 350 V/400 V
Inchange Semiconductor ...	IRF331	49Kb/2P	isc N-Channel MOSFET Transistor
International Rectifier	IRF3315	124Kb/8P	Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)
Inchange Semiconductor ...	IRF3315	338Kb/2P	N-Channel MOSFET Transistor
International Rectifier	IRF3315L	197Kb/10P	Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
Inchange Semiconductor ...	IRF3315L	300Kb/2P	Isc N-Channel MOSFET Transistor
International Rectifier	IRF3315LPBF	386Kb/10P	HEXFET Power MOSFET
	IRF3315LPBF	391Kb/11P	ADVANCED PROCESS TECHNOLOGY
	IRF3315PBF	143Kb/8P	HEXFET Power MOSFET
	IRF3315PBF	237Kb/8P	ADVANCED PROCESS TECHNOLOGY
	IRF3315PBF	237Kb/8P	ADVANCED PROCESS TECHNOLOGY
	IRF3315S	197Kb/10P	Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
Inchange Semiconductor ...	IRF3315S	189Kb/2P	Isc N-Channel MOSFET Transistor
International Rectifier	IRF3315SPBF	386Kb/10P	HEXFET Power MOSFET
	IRF3315SPBF	391Kb/11P	ADVANCED PROCESS TECHNOLOGY
	IRF3315SPBF	391Kb/11P	ADVANCED PROCESS TECHNOLOGY

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