| Producent | Numer części | Arkusz danych | Szczegółowy opis |
 Vishay Siliconix |
VB30150C
|
168Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
19-May-08 |
|
VB30150C
|
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB30150C
|
159Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
16-Aug-13 |
|
VB30150C
|
148Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
16-Aug-13 |
|
VB30150C
|
216Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
19-Jun-2018 |
 Inchange Semiconductor ... |
VB30150C
|
314Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB30150C-E3-4W
|
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB30150C-E3-8W
|
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB30150C-E3/4W
|
168Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
19-May-08 |
|
VB30150C-E3/4W
|
169Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB30150C-E3/8W
|
168Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
19-May-08 |
|
VB30150C-E3/8W
|
169Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB30150C-M3
|
87Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5.0 A
22-May-13 |
|
VB30150C-M3
|
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5.0 A
20-Jun-2018 |
 Inchange Semiconductor ... |
VB30150C-M3
|
315Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB30150C-M3
|
77Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
22-May-13 |
|
VB30150C-M3
|
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5.0 A
20-Jun-2018 |